View BTNA44N3_1221346.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
Spec. No. : C210N3-H Issued Date : 2003.06.12 Revised Date : Page No. : 1/4
BTNA44N3
Features
* High breakdown voltage. (BVCEO =400V) * Low saturation voltage, typically VCE(sat) = 0.1V at IC/IB =10mA/1mA. * Complementary to BTPA94N3
Symbol
BTNA44N3
Outline
SOT-23
BBase CCollector EEmitter
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd RJA Tj Tstg Limit 400 400 6 300 225 (Note) 556 150 -55~+150 Unit V V V mA mW C/W C C
Note : When mounted on a FR-5 board with area measuring 1.0x0.75x0.062 in.
BTNA44N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) 1 *VCE(sat) 2 *VCE(sat) 3 *VBE(sat) hFE 1 hFE 2 *hFE 3 *hFE 4 fT Cob Min. 400 400 6 40 52 45 40 20 Typ. 0.1 Max. 10 10 0.4 0.5 0.75 1.5 270 7 Unit V V V A A V V V V MHz pF
Spec. No. : C210N3-H Issued Date : 2003.06.12 Revised Date : Page No. : 2/4
Test Conditions IC=50A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=400V. IE=0 VEB=6V,IC=0 IC=1mA, IB=0.1mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA VCE=10V, IC=10mA, f=100MHz VCB=20V, f=1MHz
*Pulse Test : Pulse Width 380s, Duty Cycle2%
Classification Of hFE2
Rank Range K 52~120 P 82~180 Q 120~270
BTNA44N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current 1000 HFE@VCE=10V Current Gain---HFE 10000 Saturation Voltage-(mV)
Spec. No. : C210N3-H Issued Date : 2003.06.12 Revised Date : Page No. : 3/4
Saturation Voltage vs Collector Current
VCESAT@IC=10IB 1000
100
100
10 0.1 1 10 100 1000 Collector Current ---IC(mA)
10 0.1 1 10 100 1000 Collector Current ---IC(mA)
Saturation Voltage vs Collector Current 10000 Saturation Voltage-(mV) VBESAT@IC=10IB
Power Dissipation---PD(mW) 250 200 150 100 50 0
Power Derating Curve
1000
100 0.1 1 10 100 1000 Collector Current--- IC(mA)
0
50
100
150
200
Ambient Temperature --- Ta( )
BTNA44N3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
Spec. No. : C210N3-H Issued Date : 2003.06.12 Revised Date : Page No. : 4/4
A L 3 B 1 2 S
Marking:
TE 3D
V
G
3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector
C D K
H
J
*: Typical
DIM A B C D G H
Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040
Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10
DIM J K L S V
Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256
Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTNA44N3
CYStek Product Specification

▲Up To Search▲

Price & Availability of BTNA44N3

	To Download BTNA44N3 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .